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Transferring porous layer from InP wafer based on the disturbance

  • Yang Zhang
    ,
  • Liang Cao
    ,
  • Xiangyu Chai
    ,
  • Kaihua Liang
    ,
  • Yong-Lu Han
    ,
  • Yanqi Wang
  • Changchun University of Science and Technology
Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer-review

Abstract

We present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L-1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.

Publication Information

Output type

Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer-review

Original language

English

Pages from-to (Number of pages)

Pages 109-112

Publication milestones

  • Published - 19/01/2017

Publication status

Published - 19/01/2017

Publisher

Institute of Electrical and Electronics Engineers Inc., United States

ISBN (Print)

9781509029464

ISBN (Electronic)

9781509029457

External Publication IDs

  • handle.net: 10547/624461
  • Scopus: 85011961642

Host publication title

2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)

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