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Surface modification on GaAs by in-situ pulsed UV laser

  • Changsi Peng
    ,
  • Xiaoxiang Guo
    ,
  • Dayun Huo
    ,
  • Wei Zhang
    ,
  • Chao Xu
  • Soochow University
Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer-review

Abstract

A single-beam of UV pulse laser (355nm/10ns) was used to irradiate the as-grown GaAs (100) surface in-situ in molecular beam epitaxy with pulse numbers from 1 to 6 at laser intensity of 52.5 mJ/cm2/pulse. It was observed that the irradiated GaAs surface morphology depended strongly on the pulse number. For single pulse irradiation, small nano-dots (NDs) with high density were produced on the surface. The size of NDs increased and nano-rings (NRs) were observed with the increasing of pulse numbers. The surface was completely dominated by NRs at 6 pulses of laser irradiating. Arsenic atoms were selectively desorbed away from GaAs surface by laser irradiation leaving plenty of naked Ga-atoms to form small metal-dots of Gallium. Ga-rich NDs transferred to Ga droplets with the increased number of the laser pulses. NRs formed just as the traditional droplet-epitaxy process when the droplet size grew up to a critical size. Nano-drill process played an important role in the process. This research was supposed to provide a novel and promising solution for more controllable nano-fabrication of various semiconductor materials of MBE growing, including but not limited to GaAs reported here.

Publication Information

Output type

Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer-review

Host publication Subtitle

Proceedings Volume 9686

Original language

English

Publication milestones

  • Published - 31/12/2016

Publication status

Published - 31/12/2016

Volume

9686

Publisher

SPIE, United States

External Publication IDs

  • handle.net: 10547/624154
  • Scopus: 84999816211

Host publication title

8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices

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