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Study of in situ laser modification of InAs/GaAs quantum dots

  • Lili Miao
    ,
  • Linyun Yang
    ,
  • Xinning Yang
    ,
  • Siyi Zhuang
    ,
  • Zhenwu Shi
    ,
  • Changsi Peng
  • Soochow University
Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer-review

Abstract

We have investigated the modification of self-assembled InAs/GaAs quantum dots (QDs) by in situ pulsed laser irradiation. The QDs were fabricated by molecular beam epitaxy (MBE) in Stranski-Krastanov mode at 480℃ and then at the same temperature the pulsed laser was in situ introduced to modify the QDs with different energy. The dependence of morphology evolution on irradiation energy was carefully studied by AFM testing. The results show that laser excitation can enable both desorption and diffusion of In atoms which may induce strong modification on the InAs QDs. For irradiation of a moderate energy, the 3D dot-like InAs QD will transform into 2D oval-shaped island; Once the irradiation energy is high enough, the InAs QDs will be completely removed off from the surface. The involved mechanism is also discussed. Herein, we have proposed a new approach of fabricating QDs which is high-efficient, pollution-free, oxidation-free and defect-resistant and it is believed in the near future, it may find wide applications in both the fundamental physics research and emerging device manufacture.

Publication Information

Output type

Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer-review

Host publication Subtitle

Proceedings Volume 11339

Original language

English

Publication milestones

  • Published - 31/12/2019

Publication status

Published - 31/12/2019

Volume

11339

Publisher

SPIE, United States

External Publication IDs

  • handle.net: 10547/624156
  • Scopus: 85077961489

Host publication title

AOPC 2019: Quantum Information Technology

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