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Realization of periodic InAs QDs by in-situ four-beam laser-interference irradiation on the wetting layer

  • Linyun Yang
    ,
  • Xinning Yang
    ,
  • Lili Miao
    ,
  • Wei Zhang
    ,
  • Dayun Huo
    ,
  • Zhenwu Shi
  • Soochow University
    ,
  • CAS - Suzhou Institute of Nano-Tech and Nano-Bionics
    ,
  • Jiangsu Entry-Exit Inspection and Quarantine Bureau
Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer-review

Abstract

In this paper, during InAs/GaAs (001) quantum dot molecular beam epitaxy growth, four-beam pulsed laser-interference was used to in-situ irradiate on the wetting layer with an InAs coverage of 1.1 monolayer. Significant atomic layer removal and periodic nanostructures including nanoholes and nanoislands were obtained. These periodic nanostructures had a significant influence on quantum dot growth. Especially for the structure of nano-island, quantum dots preferentially nucleated at the edges of them. When the nano-island size becomes small enough, ordered quantum dot arrays are directly achieved on smooth GaAs surface with a follow-up InAs deposition accompanied by the disappearance of the nanoislands. This finding provides a potential technique leading to site-controlled and defect-free quantum dot fabrication.

Publication Information

Output type

Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer-review

Host publication Subtitle

Proceedings Volume 10814

Original language

English

Publication milestones

  • Published - 31/12/2018

Publication status

Published - 31/12/2018

Volume

10814

Publisher

SPIE, United States

External Publication IDs

  • handle.net: 10547/624155
  • Scopus: 85057401426

Host publication title

Optoelectronic Devices and Integration VII

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