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In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth

  • Changsi Peng
    ,
  • Wei Zhang
    ,
  • Zhenwu Shi
    ,
  • Dayun Huo
    ,
  • Xiaoxiang Guo
    ,
  • Feng Zhang
  • CAS - Suzhou Institute of Nano-Tech and Nano-Bionics
    ,
  • Soochow University
Research Output:
Contribution to journal
Article
 Peer-review

Abstract

A study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano-islands with heights of a few atomic layers were obtained via four-beam laser interference irradiation on the InGaAs wetting layer at an InAs coverage of 0.9 monolayer. The quantum dots nucleated preferentially at edges of nano-islands upon subsequent deposition of InAs on the patterned surface. When the nano-islands are sufficiently small, the patterned substrate could be spontaneously re-flattened and an ordered quantum dot array could be produced on the smooth surface. This letter discusses the mechanisms of nano-patterning and ordered quantum dot nucleation in detail. This study provides a potential technique leading to site-controlled, high-quality quantum dot fabrication.

Publication Information

Output type

Research Output:
Contribution to journal
Article
 Peer-review

Original language

English

Journal (Volume, Issue Number)

Applied Physics Letters (Volume 112, Issue 153108)

Publication milestones

  • Published - 12/04/2018

Publication status

Published - 12/04/2018

ISSN

0003-6951

Publication IDs

  • handle.net: 10547/624241
  • Scopus: 85045311533

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