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Growth of InAs quantum dots on the modified GaAs surface by using in-situ multi-pulsed laser shooting

  • Lingsu Cheng
    ,
  • Biao Geng
    ,
  • Maoyun Ren
    ,
  • Chunbo Peng
    ,
  • Yu Guo
    ,
  • Zhenwu Shi
  • Soochow University
Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer-review

Open access

Abstract

In this work, we subjected the GaAs substrate to in-situ irradiation by 10 laser pulses with 30 second interruption among each pulse at a temperature of 500℃ without As flux. Then the substrate was annealed at the same temperature for 5 minutes under As flux. We have respectively prepared a series of samples corresponding to different pulse energies (1mJ-8mJ). At the very low energy stage (1-2mJ), oval islands elongated along [-110] can be observed on the surface. At the medium energy stage (2-4mJ), the oval islands will become larger and meanwhile some very narrow nano grooves (elongated along [110]) will appear at the center of the island. At the high energy stage (4-8mJ), the islands will become larger and the grooves will widen into nano holes. The whole structure almost looks like a nano ring with a nano hole at the center. Then, we conducted a study of InAs quantum dot growth on these obtained nano structures. The results show all the InAs quantum dots strictly grow surrounding the oval islands or in the nano holes after the deposition of 2.2ML InAs at 500℃. So these structures can effectively serve as the preferential nucleation sites for quantum dots.

Publication Information

Output type

Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer-review

Original language

English

Article number

135113R

Publication milestones

  • Published - 17/02/2025

Publication status

Published - 17/02/2025

Volume

13511

Publisher

SPIE, United States

Publication series

  • Publication series name: Proceedings of SPIE - The International Society for Optical Engineering
    ISSN (Print): 0277-786X
    ISSN (Electronic): 1996-756X
    Volume: 13511

ISBN (Print)

9781510688148

ISBN (Electronic)

9781510688148

External Publication IDs

  • handle.net: 10547/626821
  • Scopus: 85219358625

Host publication title

Proceedings Volume 13511, Tenth Symposium on Novel Optoelectronic Detection Technology and Applications

Host publication editors

  • Chen Ping

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