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Fabrication of periodic gallium droplets by in-situ laser interference based on MBE

  • Maoyun Ren
    ,
  • Biao Geng
    ,
  • Lingsu Cheng
    ,
  • Yu Guo
    ,
  • Chunbo Peng
    ,
  • Zhenwu Shi
  • Soochow University
Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer-review

Open access

Abstract

In this work, the GaAs substrate was in-situ irradiated by a single-pulse of two-beam laser interference at a low temperature of 40℃. We studied the irradiated surface morphology evolution with the different pulse energies of 20mJ, 40mJ, 50mJ, 60mJ, 80mJ and 100mJ which are corresponding to sample A-F. For Sample A, the irradiation yield of Ga atoms is too limited to form metallic droplets but films with a period of about 310nm due to the low pulse energy. For Sample B, periodic bands of Ga droplets appear on the bright regions while the surface on the dark regions remains very smooth. The droplet density, average width and height are 7.5×1010/cm2, 25nm and 5.1nm. For sample C to E, as the energy rises, the average width/height of Ga droplets rise from 33nm/5.9nm, 36.7nm/8.7nm to 52.1nm/15.7nm but with the decreased density from 5.8×1010/cm2, 4×1010/cm2 to 1.7×1010/cm2. Moreover, some small Ga droplets also appear in the dark regions. Finally for sample F, when the energy becomes enough high, both the dark and bright regions generate Ga droplets of a similar size and density which is equivalent to the random growth. The resulting density is 7.4×109/cm2 and the average width/height is 63.6nm/20.2nm. Obviously, our work has provided a novel approach for fabricating periodic Ga droplets directly in MBE systems with the advantages of low-cost, high-efficiency and strong controllability which must be able to find great application prospects in droplet epitaxy of all kinds of semiconductor devices based on periodic arrays of quantum structures.

Publication Information

Output type

Research Output: Chapter in Book/Report/Conference proceeding Conference contribution Peer-review

Original language

English

Article number

135113D

Publication milestones

  • Published - 17/02/2025

Publication status

Published - 17/02/2025

Volume

13511

Publisher

SPIE, United States

Publication series

  • Publication series name: Proceedings of SPIE - The International Society for Optical Engineering
    ISSN (Print): 0277-786X
    ISSN (Electronic): 1996-756X
    Volume: 13511

ISBN (Print)

9781510688148

ISBN (Electronic)

9781510688148

External Publication IDs

  • handle.net: 10547/626819
  • Scopus: 85219343500

Host publication title

Proceedings Volume 13511, Tenth Symposium on Novel Optoelectronic Detection Technology and Applications

Host publication editors

  • Chen Ping

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