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Enable a facile size re-distribution of MBE-grown Ga-droplets via in situ pulsed laser shooting

  • Biao Geng
    ,
  • Zhenwu Shi
    ,
  • Chen Chen
    ,
  • Wei Zhang
    ,
  • Linyun Yang
    ,
  • Changwei Deng
  • Soochow University
    ,
  • AVIC Huadong Photo-electronics Co.
Research Output: Contribution to journal Article Peer-review

Open access

Abstract

A MBE-prepared Gallium (Ga)-droplet surface on GaAs (001) substrate is in situ irradiated by a single shot of UV pulsed laser. It demonstrates that laser shooting can facilely re-adjust the size of Ga-droplet and a special Ga-droplet of extremely broad size-distribution with width from 16 to 230 nm and height from 1 to 42 nm are successfully obtained. Due to the energetic inhomogeneity across the laser spot, the modification of droplet as a function of irradiation intensity (IRIT) can be straightly investigated on one sample and the correlated mechanisms are clarified. Systematically, the laser resizing can be perceived as: for low irradiation level, laser heating only expands droplets to make mergences among them, so in this stage, the droplet size distribution is solely shifted to the large side; for high irradiation level, laser irradiation not only causes thermal expansion but also thermal evaporation of Ga atom which makes the size-shift move to both sides. All of these size-shifts on Ga-droplets can be strongly controlled by applying different laser IRIT that enables a more designable droplet epitaxy in the future.

Publication Information

Output type

Research Output: Contribution to journal Article Peer-review

Original language

English

Article number

126

Journal (Volume, Issue Number)

Nanoscale Research Letters (Volume 16, Issue 1)

Publication milestones

  • Accepted/In press - 28/07/2021
  • Published - 04/08/2021

Publication status

Published - 04/08/2021

ISSN

1556-276X

External Publication IDs

  • handle.net: 10547/625080
  • Scopus: 85111988014
  • PubMed: 34347177