Transferring porous layer from InP wafer based on the disturbance

Yang Zhang; Liang Cao; Xiangyu Chai; Kaihua Liang; Yong-Lu Han; Yanqi Wang; Shuting Wang; Zhankun Weng; Zuobin Wang

doi:10.1109/3M-NANO.2016.7824988

Transferring porous layer from InP wafer based on the disturbance

Yang Zhang
, Liang Cao
, Xiangyu Chai
, Kaihua Liang
, Yong-Lu Han
, Yanqi Wang
, Shuting Wang
, Zhankun Weng
, Zuobin Wang

Changchun University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

We present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L-1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.

Original language	English
Title of host publication	2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	109-112
ISBN (Electronic)	9781509029457
ISBN (Print)	9781509029464
DOIs	https://doi.org/10.1109/3M-NANO.2016.7824988
Publication status	Published - 19 Jan 2017
Event	2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) - Chongqing Duration: 18 Jul 2016 → 22 Jul 2016

Conference

Conference	2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)
City	Chongqing
Period	18/07/16 → 22/07/16
Other	2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) (18/07/2016-22/07/2016, Chongqing)

Keywords

CPCR
InP
disturbance
electrochemical etching
transfer

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10.1109/3M-NANO.2016.7824988

https://ieeexplore.ieee.org/abstract/document/7824988

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Zhang, Y., Cao, L., Chai, X., Liang, K., Han, Y.-L., Wang, Y., Wang, S., Weng, Z., & Wang, Z. (2017). Transferring porous layer from InP wafer based on the disturbance. In 2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) (pp. 109-112). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/3M-NANO.2016.7824988

@inproceedings{73e0e5c791fa41b18c4e72ff44791cf7,

title = "Transferring porous layer from InP wafer based on the disturbance",

abstract = "We present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L-1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.",

keywords = "CPCR, InP, disturbance, electrochemical etching, transfer",

author = "Yang Zhang and Liang Cao and Xiangyu Chai and Kaihua Liang and Yong-Lu Han and Yanqi Wang and Shuting Wang and Zhankun Weng and Zuobin Wang",

year = "2017",

month = jan,

day = "19",

doi = "10.1109/3M-NANO.2016.7824988",

language = "English",

isbn = "9781509029464",

pages = "109--112",

booktitle = "2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) ; Conference date: 18-07-2016 Through 22-07-2016",

}

Zhang, Y, Cao, L, Chai, X, Liang, K, Han, Y-L, Wang, Y, Wang, S, Weng, Z & Wang, Z 2017, Transferring porous layer from InP wafer based on the disturbance. in 2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO). Institute of Electrical and Electronics Engineers Inc., pp. 109-112, 2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), Chongqing, 18/07/16. https://doi.org/10.1109/3M-NANO.2016.7824988

Transferring porous layer from InP wafer based on the disturbance. / Zhang, Yang; Cao, Liang; Chai, Xiangyu et al.
2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO). Institute of Electrical and Electronics Engineers Inc., 2017. p. 109-112.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Transferring porous layer from InP wafer based on the disturbance

AU - Zhang, Yang

AU - Cao, Liang

AU - Chai, Xiangyu

AU - Liang, Kaihua

AU - Han, Yong-Lu

AU - Wang, Yanqi

AU - Wang, Shuting

AU - Weng, Zhankun

AU - Wang, Zuobin

PY - 2017/1/19

Y1 - 2017/1/19

N2 - We present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L-1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.

AB - We present a new method to transfer the three dimensional (3D) porous layer from InP wafer based on the disturbance, during electrochemical etching of n-InP (100) with chronopotentiometry with current ramp in 3 mol-L-1 NaCl solution. The potential bursting phenomenon was observed due to the disturbing instantaneously. In addition, the correlation between the amplitude of the potential and the porous layers separated from the InP wafer was discussed.

KW - CPCR

KW - InP

KW - disturbance

KW - electrochemical etching

KW - transfer

U2 - 10.1109/3M-NANO.2016.7824988

DO - 10.1109/3M-NANO.2016.7824988

M3 - Conference contribution

SN - 9781509029464

SP - 109

EP - 112

BT - 2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)

Y2 - 18 July 2016 through 22 July 2016

ER -

Transferring porous layer from InP wafer based on the disturbance

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