Study of in situ laser modification of Ga-droplets

Xinning Yang; Linyun Yang; Lili Miao; Siyi Zhuang; Zhenwu Shi; Changsi Peng

doi:10.1117/12.2547821

Study of in situ laser modification of Ga-droplets

Xinning Yang
, Linyun Yang
, Lili Miao
, Siyi Zhuang
, Zhenwu Shi
, Changsi Peng

Institute for Research in Applicable Computing (IRAC)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we report the study on the size regulation of Ga-droplets by in situ laser irradiation. Gallium (Ga) droplets are grown on GaAs (001) substrate by molecular beam epitaxy (MBE) and the in situ laser irradiation is carried out by using an ultraviolet pulsed laser. The results show that: The laser irradiation will cause the expansion of Ga-droplets and then the adjacent Ga-droplets can touch with each other and larger Ga-droplets can be formed by the fusion of two or more droplets. So the size of Ga-droplets can be re-modified by laser irradiation and such modification is positively correlated with the irradiation intensity. In other words, we can easily define the size of Ga-droplets by using different laser irradiation energy.

Original language	English
Title of host publication	nan
Publisher	SPIE
Volume	11336
DOIs	https://doi.org/10.1117/12.2547821
Publication status	Published - 31 Dec 2019
Event	Applied Optics and Photonics China (AOPC2019) - Beijing Duration: 7 Jul 2019 → 9 Jul 2019

Conference

Conference	Applied Optics and Photonics China (AOPC2019)
City	Beijing
Period	7/07/19 → 9/07/19
Other	Applied Optics and Photonics China (AOPC2019) (07/07/2019-09/07/2019, Beijing)

Keywords

Ga-droplets
in situ laser irradiation

Access to Document

10.1117/12.2547821

https://www.spiedigitallibrary.org/conference-proceedings-of-spie/11336/113360R/Study-of-in-situ-laser-modification-of-Ga-droplets/10.1117/12.2547821.short%3FSSO%3D1

Handle.net

Persistent link

Cite this

@inproceedings{a88f36e05d3a482d9a6bce4541315a98,

title = "Study of in situ laser modification of Ga-droplets",

abstract = "In this paper, we report the study on the size regulation of Ga-droplets by in situ laser irradiation. Gallium (Ga) droplets are grown on GaAs (001) substrate by molecular beam epitaxy (MBE) and the in situ laser irradiation is carried out by using an ultraviolet pulsed laser. The results show that: The laser irradiation will cause the expansion of Ga-droplets and then the adjacent Ga-droplets can touch with each other and larger Ga-droplets can be formed by the fusion of two or more droplets. So the size of Ga-droplets can be re-modified by laser irradiation and such modification is positively correlated with the irradiation intensity. In other words, we can easily define the size of Ga-droplets by using different laser irradiation energy.",

keywords = "Ga-droplets, in situ laser irradiation",

author = "Xinning Yang and Linyun Yang and Lili Miao and Siyi Zhuang and Zhenwu Shi and Changsi Peng",

year = "2019",

month = dec,

day = "31",

doi = "10.1117/12.2547821",

language = "English",

volume = "11336",

booktitle = "nan",

publisher = "SPIE",

address = "United States",

note = "Applied Optics and Photonics China (AOPC2019) ; Conference date: 07-07-2019 Through 09-07-2019",

}

TY - GEN

T1 - Study of in situ laser modification of Ga-droplets

AU - Yang, Xinning

AU - Yang, Linyun

AU - Miao, Lili

AU - Zhuang, Siyi

AU - Shi, Zhenwu

AU - Peng, Changsi

PY - 2019/12/31

Y1 - 2019/12/31

N2 - In this paper, we report the study on the size regulation of Ga-droplets by in situ laser irradiation. Gallium (Ga) droplets are grown on GaAs (001) substrate by molecular beam epitaxy (MBE) and the in situ laser irradiation is carried out by using an ultraviolet pulsed laser. The results show that: The laser irradiation will cause the expansion of Ga-droplets and then the adjacent Ga-droplets can touch with each other and larger Ga-droplets can be formed by the fusion of two or more droplets. So the size of Ga-droplets can be re-modified by laser irradiation and such modification is positively correlated with the irradiation intensity. In other words, we can easily define the size of Ga-droplets by using different laser irradiation energy.

AB - In this paper, we report the study on the size regulation of Ga-droplets by in situ laser irradiation. Gallium (Ga) droplets are grown on GaAs (001) substrate by molecular beam epitaxy (MBE) and the in situ laser irradiation is carried out by using an ultraviolet pulsed laser. The results show that: The laser irradiation will cause the expansion of Ga-droplets and then the adjacent Ga-droplets can touch with each other and larger Ga-droplets can be formed by the fusion of two or more droplets. So the size of Ga-droplets can be re-modified by laser irradiation and such modification is positively correlated with the irradiation intensity. In other words, we can easily define the size of Ga-droplets by using different laser irradiation energy.

KW - Ga-droplets

KW - in situ laser irradiation

U2 - 10.1117/12.2547821

DO - 10.1117/12.2547821

M3 - Conference contribution

VL - 11336

BT - nan

PB - SPIE

T2 - Applied Optics and Photonics China (AOPC2019)

Y2 - 7 July 2019 through 9 July 2019

ER -

Study of in situ laser modification of Ga-droplets

Abstract

Conference

Keywords

Access to Document

Handle.net

Fingerprint

Cite this