In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth

Changsi Peng; Wei Zhang; Zhenwu Shi; Dayun Huo; Xiaoxiang Guo; Feng Zhang; Linsen Chen; Qinhua Wang; Baoshen Zhang

doi:10.1063/1.5016096

In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth

Changsi Peng
, Wei Zhang
, Zhenwu Shi
, Dayun Huo
, Xiaoxiang Guo
, Feng Zhang
, Linsen Chen
, Qinhua Wang
, Baoshen Zhang

Institute for Research in Applicable Computing (IRAC)

CAS - Suzhou Institute of Nano-Tech and Nano-Bionics
Soochow University

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano-islands with heights of a few atomic layers were obtained via four-beam laser interference irradiation on the InGaAs wetting layer at an InAs coverage of 0.9 monolayer. The quantum dots nucleated preferentially at edges of nano-islands upon subsequent deposition of InAs on the patterned surface. When the nano-islands are sufficiently small, the patterned substrate could be spontaneously re-flattened and an ordered quantum dot array could be produced on the smooth surface. This letter discusses the mechanisms of nano-patterning and ordered quantum dot nucleation in detail. This study provides a potential technique leading to site-controlled, high-quality quantum dot fabrication.

Original language	English
Journal	Applied Physics Letters
Volume	112
Issue number	153108
DOIs	https://doi.org/10.1063/1.5016096
Publication status	Published - 12 Apr 2018

Keywords

in situ laser irradiation

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@article{d3ca108afdf24f5d8a08f3f24ed3eff3,

title = "In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth",

abstract = "A study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano-islands with heights of a few atomic layers were obtained via four-beam laser interference irradiation on the InGaAs wetting layer at an InAs coverage of 0.9 monolayer. The quantum dots nucleated preferentially at edges of nano-islands upon subsequent deposition of InAs on the patterned surface. When the nano-islands are sufficiently small, the patterned substrate could be spontaneously re-flattened and an ordered quantum dot array could be produced on the smooth surface. This letter discusses the mechanisms of nano-patterning and ordered quantum dot nucleation in detail. This study provides a potential technique leading to site-controlled, high-quality quantum dot fabrication.",

keywords = "in situ laser irradiation",

author = "Changsi Peng and Wei Zhang and Zhenwu Shi and Dayun Huo and Xiaoxiang Guo and Feng Zhang and Linsen Chen and Qinhua Wang and Baoshen Zhang",

year = "2018",

month = apr,

day = "12",

doi = "10.1063/1.5016096",

language = "English",

volume = "112",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "153108",

}

TY - JOUR

T1 - In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth

AU - Peng, Changsi

AU - Zhang, Wei

AU - Shi, Zhenwu

AU - Huo, Dayun

AU - Guo, Xiaoxiang

AU - Zhang, Feng

AU - Chen, Linsen

AU - Wang, Qinhua

AU - Zhang, Baoshen

PY - 2018/4/12

Y1 - 2018/4/12

N2 - A study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano-islands with heights of a few atomic layers were obtained via four-beam laser interference irradiation on the InGaAs wetting layer at an InAs coverage of 0.9 monolayer. The quantum dots nucleated preferentially at edges of nano-islands upon subsequent deposition of InAs on the patterned surface. When the nano-islands are sufficiently small, the patterned substrate could be spontaneously re-flattened and an ordered quantum dot array could be produced on the smooth surface. This letter discusses the mechanisms of nano-patterning and ordered quantum dot nucleation in detail. This study provides a potential technique leading to site-controlled, high-quality quantum dot fabrication.

AB - A study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano-islands with heights of a few atomic layers were obtained via four-beam laser interference irradiation on the InGaAs wetting layer at an InAs coverage of 0.9 monolayer. The quantum dots nucleated preferentially at edges of nano-islands upon subsequent deposition of InAs on the patterned surface. When the nano-islands are sufficiently small, the patterned substrate could be spontaneously re-flattened and an ordered quantum dot array could be produced on the smooth surface. This letter discusses the mechanisms of nano-patterning and ordered quantum dot nucleation in detail. This study provides a potential technique leading to site-controlled, high-quality quantum dot fabrication.

KW - in situ laser irradiation

U2 - 10.1063/1.5016096

DO - 10.1063/1.5016096

M3 - Article

SN - 0003-6951

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 153108

ER -

In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth

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