Skip to main navigation Skip to search Skip to main content

Fabrication of three-dimensional Si-Au hierarchical nanostructures by laser interference lithography

  • Litong Dong
  • , Lu Wang
  • , Mengnan Liu
  • , Miao Yu
  • , Zuobin Wang
  • , Ziang Zhang
  • , Dayou Li
  • Changchun University of Science and Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper reports a method for the fabrication of 3D Si-Au hierarchical nanostructures to improve the optical performances through four-beam laser interference lithography (LIL) and inductively coupled plasma (ICP) etching. The 3D Si-Au hierarchical nanostructures were composed of silicon tapered pillar arrays, Au grids, and Au islands, and they demonstrated wide-angle antireflective properties less than 25% reflection in the entire visible wavelengths. In addition, many special properties could be obtained by displacing the islands and grid of the hierarchical structure with other metal material due to the flexibility of LIL and ICP etching.
Original languageEnglish
Title of host publicationnan
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages197-200
ISBN (Print)9781538662144
DOIs
Publication statusPublished - 29 Nov 2018
EventIEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) - Hangzhou
Duration: 13 Aug 201817 Aug 2018

Conference

ConferenceIEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)
CityHangzhou
Period13/08/1817/08/18
OtherIEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) (13/08/2018-17/08/2018, Hangzhou)

Keywords

  • Antireflection
  • ICP etching
  • Laser interference lithography
  • hierarchical nanostructure

Fingerprint

Dive into the research topics of 'Fabrication of three-dimensional Si-Au hierarchical nanostructures by laser interference lithography'. Together they form a unique fingerprint.

Cite this