Fabrication of silicon nanostripe structures by laser-interference-induced backward transfer technique

The laser-interference-induced backward transfer (LIIBT) that occurred during the nanostripe structuring of materials, performed by two-beam laser interference at the ITO glass/silicon wafer system under a normal atmospheric environment. The results showed that the nanostripe structures with nanoparticles (NPs) can be obtained at the laser fluence of 65–95 mJ·cm−2 for the laser duration of 100 and 200 pulses, respectively. The EDX analysis revealed that the silicon element was transferred on the surface of the nanostripe structures. In addition, Raman spectra with the peaks at ~520 cm−1 verified that the crystalline silicon was deposited on the nanostripe structures during the LIIBT process. Furthermore, the photoluminescence (PL) spectrum with the peak at ~395 nm belongs to the In2O3 nanostructure at the laser fluence of 45 mJ·cm−2 for 200 pulses. The peak at ~405 nm corresponds to the silicon nanostructures and it is covered by SiO at the laser fluence of 75 mJ·cm−2 for 200 pulses. The LIIBT shown here would greatly reduce the complexity in the fabrication of the nanostripe structures and give an impetus to the laser-induced backward transfer.